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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF RADIO. FEATURES
Ultra Low Series Resistance : rS=0.44 (Typ.) Small Package.
KDV239
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1 K
G
A
H F
2 D
E
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL VR Tj Tstg RATING 15 150 -55 150
1. ANODE 2. CATHODE
UNIT V
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance VR IR C2V C10V K rS
)
TEST CONDITION IR=1 A VR=15V VR=2V, f=1MHz VR=10V, f=1MHz C2V/C10V, f=1MHz VR=1V, f=470MHz MIN. 15 3.8 1.5 2.0 TYP. 4.25 1.75 2.4 0.44 MAX. 3 4.7 2.0 0.6 UNIT V nA pF
SYMBOL
Marking
Type Name
UJ
2001. 6. 11
Revision No : 1
L
1/2
KDV239
CV - VR
10 REVERSE CURRENT IR (A) CAPACITANCE C V (pF) 7 5 3
f=1MHz Ta=25 C
I R - VR
100p
10p
Ta=80 C
1p
Ta=60 C Ta=25 C
0.1p
1 0 4 8 12 16 REVERSE VOLTAGE VR (V)
0.01p 0 5 10 15 20 25
REVERSE VOLTAGE VR (V)
r s - VR
0.8 SERIES RESISTANCE r s () SERIES RESISTANCE rs ()
Ta=25 C f=100MHz
rs - f
1.0 0.8 0.6 0.4 0.2 0 20
VR=1V Ta=25 C
0.6
0.4
0.2
0 1 3 5 10 20
50
100
300
500
1K
REVERSE VOLTAGE VR (V)
FREQUENCY f (MHz)
C - Ta
3 CAPACITANCE CHANGE RATIO C (%)
f=1MHz
VR=1V VR=2V VR=6V VR=10V
2 1 0 -1 -2 -3 -50
NOTE :
C(%) =
C(Ta) - C(25) C(25)
100
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE Ta ( C)
2001. 6. 11
Revision No : 1
2/2

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